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AUIRFU9024N Dataheets PDF



Part Number AUIRFU9024N
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet AUIRFU9024N DatasheetAUIRFU9024N Datasheet (PDF)

AUTOMOTIVE GRADE PD - 96351 Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * D AUIRFR9024N AUIRFU9024N HEXFET® Power MOSFET V(BR)DSS -55V 0.175Ω -11A G S RDS(on) max. ID Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs uti.

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AUTOMOTIVE GRADE PD - 96351 Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * D AUIRFR9024N AUIRFU9024N HEXFET® Power MOSFET V(BR)DSS -55V 0.175Ω -11A G S RDS(on) max. ID Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. D D G D S G D S D-Pak AUIRFR9024N G D I-Pak AUIRFU9024N S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy(Thermally limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Max. -11 -8 -44 38 0.30 ± 20 62 -6.6 3.8 -10 -55 to + 150 Units A W W/°C V mJ A mJ V/ns °C ™ Ù d Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds ™ e 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount) ** Junction-to-Ambient Typ. ––– ––– ––– Max. 3.3 50 110 Units °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 01/19/11 AUIRFR/U9024N Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. -55 ––– ––– -2.0 2.5 ––– ––– ––– ––– Typ. ––– -0.05 ––– ––– ––– ––– ––– ––– ––– Max. ––– ––– 0.175 -4.0 ––– -25 -250 100 -100 Units V Ω V S µA nA Conditions VGS = 0V, ID = -250µA VGS = -10V, ID = -6.6A VDS = -25V, ID = -7.2A VDS = -55V, VGS = 0V VGS = -20V VGS = 20V V/°C Reference to 25°C, ID = -1mA VDS = VGS, ID = -250µA f h VDS = -44V, VGS = 0V, TJ = 150°C Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13 55 23 37 4.5 7.5 350 170 92 19 5.1 10 ––– ––– ––– ––– ––– ––– ––– ––– ––– pF nH ns nC ID = -7.2A VDS = -44V VGS = -10V,See Fig 6 and 13 VDD = -28V ID = -7.2A RG = 24 Ω RD = 3.7Ω, See Fig.10 Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = -25V ƒ = 1.0MHz,see Fig.5 fh Ãfh D G S h D Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. ––– ––– ––– ––– ––– Typ. ––– ––– ––– 47 84 Max. -11 -44 -1.6 71 130 Units A showing the integral reverse Conditions MOSFET symbol G S Ù V ns nC p-n junction diode. TJ = 25°C, IS = -7.2A, VGS = 0V TJ = 25°C, IF = -7.2A di/dt = 100A/µs f fh Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Starting TJ = 25°C, L = 2.8mH RG = 25Ω, IAS = -6.6A (See Figure 12) ƒ ISD ≤ -6.6A, di/dt ≤ -240A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. † Uses IRF9Z24N data and test conditions. ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer t.


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