M29W256GH

256Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers) – VPPH = 12V for fast program (optional) Asynchronous random/page read – Page size: 8 words or 16 bytes – Page access: 25ns, 30ns – Random access: 60ns1, 70ns, 80ns Fast program commands: 32-word (64-byte) write buffer Enhanced buffered program commands: 256-word Program time – 16µs per byte/word TYP – Chip program time: 10s with V PPH and 16s without V PPH Memory organization – Uniform blocks: 256 main blocks, 128KB, or 64Kwords each Program/erase controller – Embedded byte/word program algorithms Program/erase suspend and resume capability – Read from any block during a PROGRAM SUSPEND operation – Read or program another block during an ERASE SUSPEND operation Unlock bypass, block erase, chip erase, write to buffer and program – Fast buffered/batch programming – Fast block/chip erase VPP/WP# pin protection – Protects first or last block regardless of block -protection settings Software protection – Volatile protection – Nonvolatile protection – Password protection Extended memory block – 128-word (256-byte) memory block for permanent, secure identification – Programmed or locked at the factory or by the customer Common Flash interface – 64-bit security code Low power consumption: Standby and automatic mode JESD47H-compliant – 100,000 minimum PROGR...