DMN21D2UFB

DMN21D2UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT ADVANCE INFORMATION ADVANCE INFORMATION V(BR)DSS RDS(ON) max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 20V 2.4Ω @ VGS = 1.8V 3.0Ω @ VGS = 1.5V 500mA 350mA ID max TA = 25°C 760mA 700mA Features and Benefits Low On-Resistance Very low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package 1mm x 0.6mm Low Package Profile, 0.5mm Maximum Package height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. General Purpose Interfacing Switch Power Management Functions Analog Switch Mechanical Data Case: X1-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (approximate) Drain X1-DFN1006-3 S D G ESD PROTECTED Bottom View Top View Package Pin Configuration Body Diode Gate Gate Protection Diode Source Equivalent Circuit ...