TPCP8204
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS Ⅳ)
TPCP8204
Portable Equipment Application...
TPCP8204
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOS Ⅳ)
TPCP8204
Portable Equipment Applications Motor Drive Applications
Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.)
（VGS=10V） High forward transfer admittance:|Yfs| = 8 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
0.33±0.05
0.05 M A
8
5
Unit: mm
2.4±0.1 2.8±0.1
0.475 1
4
0.65
2.9±0.1
S
0.025 S 0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1 -0.11
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
DC Drain current
Pulse
(Note 1) (Note 1)
Drain power dissipation (t = 5 s)
(Note 2a)
Single-device operation (Note 3a)
Single-device value at dual operation
(Note 3b)
Drain power dissipation (t = 5 s)
(Note 2b)
Single-device operation (Note 3a)
Single-device value at dual operation
(Note 3b)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD (1)
PD (2)
PD (1)
PD (2)
EAS IAR EAR Tch Tstg
30
V
30
V
±20
V
4.2 A
16.8
1.48
1.23
W 0.58
0.36
2.86
mJ
2.1
A
0.009
mJ
150
°C
−55~150
°C
Note: For Notes 1 to 6, refer to the next page.
Using continuously under heavy loads (e.g. the appli...
