TPCP8009

MOSFETs Silicon N-channel MOS (U-MOS) TPCP8009 1. Applications Motor Drivers Mobile Equipment 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 9.6 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPCP8009 PS-8 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-08 2016-02-23 Rev.9.0 TPCP8009 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 10 A Drain current (pulsed) (Note 1) IDP 40 Power dissipation (t = 5 s) (Note 2) PD 2.01 W Power dissipation (t = 5 s) (Note 3) PD 1 W Single-pulse avalanche energy (Note 4) EAS 134.1 mJ Avalanche current IAR 10 A Channel temperature (Note 5) Tch 175  Storage temperature (Note 5) Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appro...