TPCP8005-H

TPCP8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPCP8005-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 9.8 mΩ (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA) S Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.475 1 4 B A 0.65 2.9±0.1 0.05 M B 0.8±0.05 0.025 S 0.17±0.02 0.28 +0.1 -0.11 1.12 -0.12 +0.13 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 2a) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 ±20 11 44 1.68 Unit V V V A 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain 1.12 +0.13 -0.12 0.28 +0.1 -0.11 JEDEC JEITA TOSHIBA ― ― 2-3V1K Pulsed (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Drain power dissipation W Weight: 0.017 g (typ.) Drain power dissipation 0.84 W Circuit Configuration 8 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy 78.7 11 0.137 150 −55 to 150 mJ A mJ °C °C 1 2 3 4 Note: For Notes 1 to 4, refer to the ...