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TPCF8306

Toshiba Semiconductor
Part Number TPCF8306
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Aug 27, 2014
Detailed Description TPCF8306 MOSFETs Silicon P-Channel MOS (U-MOS) TPCF8306 1. Applications • Power Management Switches 2. Features (1) (...
Datasheet PDF File TPCF8306 PDF File

TPCF8306
TPCF8306

Overview
TPCF8306 MOSFETs Silicon P-Channel MOS (U-MOS) TPCF8306 1.
Applications • Power Management Switches 2.
Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ.
) (VGS = -4.
5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.
8 to -2.
0 V (VDS = -10 V, ID = -0.
1 mA) 3.
Packaging and Internal Circuit 1: Source1 2: Gate1 3: Source2 4: Gate2 5, 6: Drain2 7, 8: Drain1 VS-8 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation (single ope...


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