TPCF8107

TPCF8107 MOSFETs Silicon P-Channel MOS (U-MOS) TPCF8107 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) 3. Packaging and Internal Circuit 5: Source 4: Gate 1, 2, 3, 6, 7, 8: Drain VS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (t = 5 s) (t = 5 s) (Note 1) (Note 1) (Note 2) (Note 3) (Note 4) Symbol VDSS VGSS ID IDP PD PD EAS IAR Tch Tstg Rating -30 -25/+20 -6 -24 2.5 0.7 23.4 -6 150 -55 to 150 W W mJ A  A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and in...