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TPC6008-H

Part Number	TPC6008-H
Manufacturer	Toshiba Semiconductor
Description	MOSFETs
Published	Aug 27, 2014
Detailed Description	TPC6008-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC6008-H 1. Applications • • • High-Efficiency DC-DC Converters Not...
Datasheet	TPC6008-H PDF File

Overview

TPC6008-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC6008-H 1.
Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2.
Features (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 0.
9 nC (typ.
) Low drain-source on-resistance: RDS(ON) = 50 mΩ (typ.
) (VGS = 4.
5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
1 mA) 3.
Packaging and Internal Circuit 1, 2, 5, 6: Drain 3: Gate 4: Source VS-6 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) P...

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TPC6008-H MOSFETs - Toshiba Semiconductor

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