600V N-Channel MOSFET
FQP8N60/FQPF8N60
600V N-Channel MOSFET
Features
■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 2...
Description
FQP8N60/FQPF8N60
600V N-Channel MOSFET
Features
■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 23pF) ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability ■ ROHS product
General Description
This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
Symbol
VDSS ID Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) PD Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) 147 1.18 (Note 1) 7.5 4.4 28 ±30 420 14.7 5.5 48 0.38 -55 ~ 150 300
Parameter
FQP8N60
FQPF8N60
600 7.5* 4.4* 28*
Units
V A A A V mJ mJ V/ns W W/ °C °C °C
IDM VGS EAS EAR dv/dt
TSTG, TJ TL
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ Thermal Resistance, Junction-to-Ambient
FQP8N60
0.85 0.5 62.5
FQPF8N...
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