IPD30N10S3L-34

OptiMOS®-T Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested IPD30N10S3L-34 Product Summary V DS R DS(on),max ID 100 V 31 mW 30 A PG-TO252-3-11 Type IPD30N10S3L-34 Package Marking PG-TO252-3-11 3N10L34 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=15A Avalanche current, single pulse I AS Gate source voltage2) V GS Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 30 20 120 138 30 ±20 57 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.1 page 1 2011-10-06 IPD30N10S3L-34 Parameter Symbol Conditions Thermal characteris...