PMCPB5530X

PMCPB5530X 020 -6 20 V, complementary Trench MOSFET Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. DF N2 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm  Exposed drain pad for excellent thermal conduction 1.3 Applications  Charging switch for portable devices  DC-to-DC converters  Small brushless DC motor drive  Power management in battery-driven portables  Hard disc and computing power management 1.4 Quick reference data Table 1. Symbol RDSon Quick reference data Parameter drain-source on-state resistance drain-source on-state resistance drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Conditions VGS = 4.5 V; ID = 3 A; Tj = 25 °C Min - Typ 26 Max 34 Unit mΩ TR1 (N-channel), Static characteristics TR2 (P-channel), Static characteristics RDSon VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C 55 70 mΩ TR1 (N-channel) VDS VGS ID Tj = 25 °C -12 20 12 5.3 V V A NXP Semiconductors PMCPB5530X 20 V, complementary Trench MOSFET Table 1. Symbol VDS VGS ID [1] Quick reference data …continued Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] C...