NX2301P

NX2301P 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 26 October 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ „ „ „ 1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications „ „ „ „ Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = −4.5 V Tj = 25 °C; VGS = −4.5 V; ID = −1 A [1] Min - Typ 100 Max −20 ±8 −2 120 Unit V V A mΩ [2] [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s. Pulse test: tp ≤ 300 μs; δ ≤ 0.01. NXP Semiconductors NX2301P 20 V, 2 A P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning Symbol G S D Description gate source drain 1 2 S 017aaa094 Simplified outline 3 Graphic symbol D G 3. Ordering information Table 3. Ordering information Package Name NX2301P Description Version SOT23 TO-236AB plastic surface-mounted package; 3 leads Type number 4. Marking Table 4. NX2301P [1] * = placeholder for manufacturing site code Marking codes Markin...