NX2301P
20 V, 2 A P-channel Trench MOSFET
Rev. 1 — 26 October 2010 Product data sheet
1. Product profile
1.1 General de...
NX2301P
20 V, 2 A P-channel Trench MOSFET
Rev. 1 — 26 October 2010 Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSFET technology AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = −4.5 V Tj = 25 °C; VGS = −4.5 V; ID = −1 A
[1]
Min -
Typ 100
Max −20 ±8 −2 120
Unit V V A mΩ
[2]
[1] [2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s. Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
NXP Semiconductors
NX2301P
20 V, 2 A P-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 Pinning Symbol G S D Description gate source drain
1 2
S
017aaa094
Simplified outline
3
Graphic symbol
D
G
3. Ordering information
Table 3. Ordering information Package Name NX2301P Description Version SOT23 TO-236AB plastic surface-mounted package; 3 leads Type number
4. Marking
Table 4. NX2301P
[1] * = placeholder for manufacturing site code
Marking codes Markin...