DatasheetsPDF.com

PMDT670UPE

NXP Semiconductors
Part Number PMDT670UPE
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 25, 2014
Detailed Description SO T6 PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product pr...
Datasheet PDF File PMDT670UPE PDF File

PMDT670UPE
PMDT670UPE

Overview
SO T6 PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET Rev.
1 — 13 September 2011 Product data sheet 1.
Product profile 1.
1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
66 1.
2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.
3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.
4 Quick reference data Table 1.
Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)