PMDPB65UP

PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET Rev. 2 — 8 March 2011 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Trench MOSFET technology  1.8 V RDSon rated for low voltage gate drive  1 kV ElectroStatic Discharge (ESD) protection  Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm  Exposed drain pad for excellent thermal conduction 1.3 Applications  Charging switch for portable devices  DC-to-DC converters  Small brushless DC motor drive  Power management in battery-driven portables  Hard disk and computing power management 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -1 A; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C [1] Conditions Tamb = 25 °C Min -8 - Typ 58 Max Unit -20 8 -3.5 70 V V A mΩ Per transistor Static characteristics (per transistor) [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. NXP Semiconductors PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S1 G1 D...