PSMN4R6-100XS

TO -2 20F PSMN4R6-100XS N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A) Rev. 1 — 3 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Isolated package  Suitable for standard level gate drive 1.3 Applications  AC-to-DC power supply equipment  Motor control  Server power supplies  Synchronous rectification 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 15 A; VDS = 50 V; see Figure 14; see Figure 15 Min Typ 3.95 Max 100 70.4 63.8 4.6 Unit V A W mΩ Static characteristics Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge non-repetitive drain-source avalanche energy 40 153 673 nC nC mJ Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 70.4 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω; see Figure 3 NXP Semiconductors PSMN4R6-100XS N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A) 2. Pinning inform...