PSMN5R6-100PS

PSMN5R6-100PS 30 November 2012 N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Improved dynamic avalanche performance Suitable for standard level gate drive sources 1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11; Fig. 12 VGS = 10 V; ID = 80 A; VDS = 50 V; Fig. 13; Fig. 14 43 141 nC nC [1] Min - Typ - Max 100 100 306 Unit V A W Static characteristics drain-source on-state resistance 4.3 5.6 mΩ Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge Avalanche Ruggedness non-repetitive drainsource avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 100 V; RGS = 50 Ω; unclamped 469 mJ Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN5R6-100PS N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 [1] Continious cur...