Document
D2
PA K
PSMN7R0-100BS
N-channel 100V 6.8 mΩ standard level MOSFET in D2PAK.
Rev. 2 — 2 March 2012 Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 25 A; VDS = 50 V; see Figure 15; see Figure 14 VGS = 10 V; ID = 25 A; VDS = 50 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup = 100 V; unclamped; RGS = 50 Ω Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -55 -
Typ 5.4 36 125
Max 100 100 269 175 12 6.8 -
Unit V A W °C mΩ mΩ nC nC
Static characteristics
Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 315 mJ
[1]
Continuous current is limited by package.
NXP Semiconductors
PSMN7R0-100BS
N-channel 100V 6.8 mΩ standard level MOSFET in D2PAK.
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G S
2 1 3
SOT404 (D2PAK)
[1] It is not possible to make connection to pin 2.
3. Ordering information
Table 3. Ordering information Package Name PSMN7R0-100BS D2PAK Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) Version SOT404 Type number
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature source current peak source current non-repetitive drain-source avalanche energy Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup = 100 V; unclamped; RGS = 50 Ω
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ VGS = 10 V; Tmb = 100 °C; see Figure 1 VGS = 10 V; Tmb = 25 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 Tmb = 25 °C; see Figure 2
[1]
Min -20 -55 -55 -
Max 100 100 20 85 100 475 269 175 175 260 100 475 315
Unit V V V A A A W °C °C °C A A mJ
Source-dra.