DatasheetsPDF.com

PSMN7R0-100BS Dataheets PDF



Part Number PSMN7R0-100BS
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description MOSFET
Datasheet PSMN7R0-100BS DatasheetPSMN7R0-100BS Datasheet (PDF)

D2 PA K PSMN7R0-100BS N-channel 100V 6.8 mΩ standard level MOSFET in D2PAK. Rev. 2 — 2 March 2012 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive 1.3 Applications  D.

  PSMN7R0-100BS   PSMN7R0-100BS



Document
D2 PA K PSMN7R0-100BS N-channel 100V 6.8 mΩ standard level MOSFET in D2PAK. Rev. 2 — 2 March 2012 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive 1.3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 25 A; VDS = 50 V; see Figure 15; see Figure 14 VGS = 10 V; ID = 25 A; VDS = 50 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup = 100 V; unclamped; RGS = 50 Ω Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 5.4 36 125 Max 100 100 269 175 12 6.8 - Unit V A W °C mΩ mΩ nC nC Static characteristics Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 315 mJ [1] Continuous current is limited by package. NXP Semiconductors PSMN7R0-100BS N-channel 100V 6.8 mΩ standard level MOSFET in D2PAK. 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol D G S 2 1 3 SOT404 (D2PAK) [1] It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Package Name PSMN7R0-100BS D2PAK Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) Version SOT404 Type number 4. Limiting values Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature source current peak source current non-repetitive drain-source avalanche energy Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup = 100 V; unclamped; RGS = 50 Ω [1] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ VGS = 10 V; Tmb = 100 °C; see Figure 1 VGS = 10 V; Tmb = 25 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 Tmb = 25 °C; see Figure 2 [1] Min -20 -55 -55 - Max 100 100 20 85 100 475 269 175 175 260 100 475 315 Unit V V V A A A W °C °C °C A A mJ Source-dra.


PSMN5R6-100BS PSMN7R0-100BS PSMN9R5-100BS


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)