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PSMN050-80BS Dataheets PDF



Part Number PSMN050-80BS
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description MOSFET
Datasheet PSMN050-80BS DatasheetPSMN050-80BS Datasheet (PDF)

D2 PA K PSMN050-80BS N-channel 80 V 46 mΩ standard level MOSFET in D2PAK Rev. 1 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive sources 1.3 Application.

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D2 PA K PSMN050-80BS N-channel 80 V 46 mΩ standard level MOSFET in D2PAK Rev. 1 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive sources 1.3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance gate-drain charge total gate charge non-repetitive drain-source avalanche energy VGS = 10 V; ID = 10 A; Tj = 25 °C Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 37 Max 80 22 56 175 46 Unit V A W °C mΩ Static characteristics Dynamic characteristics QGD QG(tot) EDS(AL)S VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 2.3 11 18 nC nC mJ Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 22 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped NXP Semiconductors PSMN050-80BS N-channel 80 V 46 mΩ standard level MOSFET in D2PAK 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source mounting base; connected to drain 2 1 3 mb D Simplified outline Graphic symbol G mbb076 S SOT404 (D2PAK) [1] It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Package Name PSMN050-80BS D2PAK Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) Version SOT404 Type number 4. Limiting values Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature source current peak source current non-repetitive drain-source avalanche energy Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C VGS = 10 V; Tj(init) = 25 °C; ID = 22 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped VGS = 10 V; Tmb = 100 °C; see Figure 1 VGS = 10 V; Tmb = 25 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 Tmb = 25 °C;see Figure 2 Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ Min -20 -55 -55 Max 80 80 20 16 22 88 56 175 175 260 22 88 18 Unit V V V A A A W °C °C °C A A mJ In accordance with the Absolute Maximum Rating System (IEC 60134). Source-drain diode Avalanche ruggedness PSMN050-80BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 2 March 2012 2 of 14 NXP Semiconductors PSMN050-80BS N-channel 80 V 46 mΩ standard level MOSFET in D2PAK 30 ID (A) 20 003aad056 120 Pder (%) 80 03aa16 10 40 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 Tmb (°C) 200 Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aad301 103 ID (A) 102 Limit RDSon = VDS / ID 10 μs 10 100 μs 1 DC 1 ms 10-1 10 ms 100 ms 10-2 1 10 102 VDS (V) 103 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN050-80BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 2 March 2012 3 of 14 NXP Semiconductors PSMN050-80BS N-channel 80 V 46 mΩ standard level MOSFET in D2PAK 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter Conditions Min Typ 2.2 50 Max 2.7 Unit K/W K/W thermal resistance from junction to see Figure 4 mounting base thermal resistance from junction to Minimum footprint; mounted on a ambient printed circuit board 10 Zth(j-mb) δ = 0.5 (K/W) 1 0.2 0.1 0.05 -1 10 0.02 003aad055 10-2 single shot 10 -3 P δ= tp T tp T t 10-4 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN050-80BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 2 March 2012 4 of 14 NXP Semiconductors PSMN050-80BS N-channel 80 V 46 mΩ standard level MOSFET in D2PAK 6. Characteristics Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 250 µA; VGS = 0 V; Tj = -55 °C ID = 250 µA; VGS = 0 V; Tj = 25 °C ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 11; see Figure 12 ID = 1 mA; VDS = VGS; Tj = -55 .


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