Document
D2
PA K
PSMN050-80BS
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK
Rev. 1 — 2 March 2012 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance gate-drain charge total gate charge non-repetitive drain-source avalanche energy VGS = 10 V; ID = 10 A; Tj = 25 °C Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 37 Max 80 22 56 175 46 Unit V A W °C mΩ
Static characteristics
Dynamic characteristics QGD QG(tot) EDS(AL)S VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 2.3 11 18 nC nC mJ
Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 22 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped
NXP Semiconductors
PSMN050-80BS
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source mounting base; connected to drain
2 1 3 mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT404 (D2PAK)
[1] It is not possible to make connection to pin 2.
3. Ordering information
Table 3. Ordering information Package Name PSMN050-80BS D2PAK Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) Version SOT404 Type number
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature source current peak source current non-repetitive drain-source avalanche energy Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C VGS = 10 V; Tj(init) = 25 °C; ID = 22 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped VGS = 10 V; Tmb = 100 °C; see Figure 1 VGS = 10 V; Tmb = 25 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 Tmb = 25 °C;see Figure 2 Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ Min -20 -55 -55 Max 80 80 20 16 22 88 56 175 175 260 22 88 18 Unit V V V A A A W °C °C °C A A mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
PSMN050-80BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 2 March 2012
2 of 14
NXP Semiconductors
PSMN050-80BS
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK
30 ID (A) 20
003aad056
120 Pder (%) 80
03aa16
10
40
0 0 50 100 150 Tmb (°C) 200
0 0 50 100 150 Tmb (°C) 200
Fig 1.
Continuous drain current as a function of mounting base temperature
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
003aad301
103 ID (A) 102 Limit RDSon = VDS / ID 10 μs
10
100 μs
1 DC 1 ms 10-1 10 ms 100 ms
10-2 1 10
102
VDS (V)
103
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN050-80BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 2 March 2012
3 of 14
NXP Semiconductors
PSMN050-80BS
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter Conditions Min Typ 2.2 50 Max 2.7 Unit K/W K/W thermal resistance from junction to see Figure 4 mounting base thermal resistance from junction to Minimum footprint; mounted on a ambient printed circuit board
10 Zth(j-mb) δ = 0.5 (K/W) 1 0.2 0.1 0.05 -1 10 0.02
003aad055
10-2 single shot 10
-3
P
δ=
tp T
tp T
t
10-4 10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN050-80BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 2 March 2012
4 of 14
NXP Semiconductors
PSMN050-80BS
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK
6. Characteristics
Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 250 µA; VGS = 0 V; Tj = -55 °C ID = 250 µA; VGS = 0 V; Tj = 25 °C ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 11; see Figure 12 ID = 1 mA; VDS = VGS; Tj = -55 .