NXS7002AK

NXS7002AK 25 September 2012 60 V, single N-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protected up to 400 V 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA; Tj = 25 °C [1] Conditions Tamb = 25 °C Min -20 - Typ - Max 60 20 190 Unit V V mA Static characteristics drain-source on-state resistance [1] - 3 5 Ω Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . 2 Scan or click this QR code to view the latest information for this product NXP Semiconductors NXS7002AK 60 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 G Simplified outline 3 Graphic symbol D TO-236AB (SOT23) S 017aaa255 3. Ordering information Table 3. Ordering information Package Name NXS7002AK TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4. Marking Table 4. Marking codes Marking code [1] Type numb...