2N7002F

2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Logic level threshold compatible s Surface-mounted package s Very fast switching s TrenchMOS technology 1.3 Applications s Logic level translator s High-speed line driver 1.4 Quick reference data s VDS ≤ 60 V s RDSon ≤ 2 Ω s ID ≤ 475 mA s Ptot ≤ 0.83 W 2. Pinning information Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D) 1 2 3 D Simplified outline Symbol G SOT23 mbb076 S Philips Semiconductors 2N7002F N-channel TrenchMOS FET 3. Ordering information Table 2: Ordering information Package Name 2N7002F TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM drain-source voltage drain-gate voltage (DC) gate-source voltage peak gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tsp = 25 °C Tsp = 25 °C; pulsed; tp ≤ 10 µs tp ≤ 50 µs; pulsed; duty cycle = 25 % Tsp = 25 °C; VGS = 10 V; see Figure 2 and 3 Tsp = 100 °C; VGS = 10 V; see Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tsp = 25 °C; see Figure 1 C...