BSH111

BSH111 N-channel enhancement mode field-effect transistor Rev. 02 — 26 April 2002 M3D088 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: BSH111 in SOT23. 2. Features s s s s TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Logic level translator. 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) 3 d Simplified outline Symbol source (s) drain (d) 1 Top view 2 MSB003 g s MBB076 SOT23 Philips Semiconductors BSH111 N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 150 °C Tsp = 25 °C; VGS = 4.5 V Tsp = 25 °C VGS = 4.5 V; ID = 500 mA VGS = 2.5 V; ID = 75 mA VGS = 1.8 V; ID = 75 mA Typ 2.3 2.4 3.1 Max 55 335 0.83 150 4.0 5.0 8.0 Unit V mA W °C Ω Ω Ω drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage drain current (DC) Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 Tsp = 100 °C; VGS = 4.5 V; Figure 2 IDM Ptot Tstg Tj...