BUK7575-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 30 July 2009 Product data sheet
1. Product profile
1.1 Ge...
BUK7575-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 30 July 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive and general purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3 Tmb = 25 °C; see Figure 2 Min Typ Max 100 23 99 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation Symbol Parameter
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 13 A; Tj = 175 °C; see Figure 12 and 13 VGS = 10 V; ID = 13 A; Tj = 25 °C; see Figure 12 and 13 187 mΩ ID = 14 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped 100 mJ
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64
75
mΩ
NXP Semiconductors
BUK7575-100A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symb...