BUK7528-100A

TO -22 0A B BUK7528-100A N-channel TrenchMOS standard level FET Rev. 2 — 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance 1.3 Applications „ Automotive and general purpose power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C Min Typ Ma x 20 47 Uni t A 100 V 166 W 28 mΩ Static characteristics Avalanche ruggedness EDS(AL)S non-repetitive ID = 30 A; Vsup ≤ 25 V; drain-source avalanche RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped energy 45 mJ NXP Semiconductors BUK7528-100A N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain mb D Simplified outline Graphic symbol G mbb076 S 1 2 3 SOT78A (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name BUK7528-100A TO-220AB Description plastic single-ended package; heatsink mounte...