DatasheetsPDF.com

BUK7Y102-100B Dataheets PDF



Part Number BUK7Y102-100B
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS standard level FET
Datasheet BUK7Y102-100B DatasheetBUK7Y102-100B Datasheet (PDF)

BUK7Y102-100B N-channel TrenchMOS standard level FET Rev. 03 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Q101 compliant  Suitable for standard level gate d.

  BUK7Y102-100B   BUK7Y102-100B


Document
BUK7Y102-100B N-channel TrenchMOS standard level FET Rev. 03 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Q101 compliant  Suitable for standard level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V, 24 V and 42 V loads  Automotive systems  DC-to-DC converters  General purpose power switching  Solenoid drivers 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 100 15 60 V A W Static characteristics RDSon VGS = 10 V; ID = 5 A; Tj = 25 °C; see Figure 12; see Figure 13 86 102 mΩ Avalanche ruggedness EDS(AL)S non-repetitive ID = 15 A; Vsup ≤ 100 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 5 A; VDS = 80 V; VGS = 10 V; see Figure 16 35 mJ Dynamic characteristics QGD 4.7 nC NXP Semiconductors BUK7Y102-100B N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol D G S 1 2 3 4 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Package Name BUK7Y102-100B LFPAK Description Version plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 Type number BUK7Y102-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 7 April 2010 2 of 14 NXP Semiconductors BUK7Y102-100B N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 4 Tmb = 100 °C; VGS = 10 V; see Figure 1 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C ID = 15 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped see Figure 3 [1][2][3] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -20 -55 -55 Typ Max 100 100 20 15 10.6 60 60 175 175 15 60 35 Unit V V V A A A W °C °C A A mJ Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 4 Tmb = 25 °C; see Figure 2 Source-drain diode Avalanche ruggedness EDS(AL)R - - - J [1] [2] [3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by an average junction temperature of 170 °C. Refer to application note AN10273 for further information. BUK7Y102-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 7 April 2010 3 of 14 NXP Semiconductors BUK7Y102-100B N-channel TrenchMOS standard level FET 20 ID (A) 15 003aac523 120 Pder (%) 80 03na19 10 40 5 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 Tmb (°C) 200 Fig 1. Continuous drain current as a function of mounting base temperature 102 IAL (A) 10 Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aac502 (1) 1 (2) 10-1 (3) 10-2 10-3 10-2 10-1 1 tAL (ms) 10 Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time BUK7Y102-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 7 April 2010 4 of 14 NXP Semiconductors BUK7Y102-100B N-channel TrenchMOS standard level FET 102 Limit RDSon = VDS / ID ID (A) 10μ s 10 100μ s 003aac623 DC 1 1ms 10ms 100ms 10-1 1 10 102 VDS (V) 103 Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions see Figure 5 Min Typ Max 2.53 Unit K/W 10 Zth (j-mb) (K/W) δ = 0.5 1 0.2 0.1 003aac483 10-1 0.05 0.02 single shot P δ= tp T tp T t 10-2 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 5. Transient thermal impedance from junction to mounting base as.


BUK9Y104-100B BUK7Y102-100B BUK9Y113-100E


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)