Document
BUK7Y102-100B
N-channel TrenchMOS standard level FET
Rev. 03 — 7 April 2010 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive systems DC-to-DC converters General purpose power switching Solenoid drivers
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 100 15 60 V A W
Static characteristics RDSon VGS = 10 V; ID = 5 A; Tj = 25 °C; see Figure 12; see Figure 13 86 102 mΩ
Avalanche ruggedness EDS(AL)S non-repetitive ID = 15 A; Vsup ≤ 100 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 5 A; VDS = 80 V; VGS = 10 V; see Figure 16 35 mJ
Dynamic characteristics QGD 4.7 nC
NXP Semiconductors
BUK7Y102-100B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G S
1 2 3 4
SOT669 (LFPAK)
3. Ordering information
Table 3. Ordering information Package Name BUK7Y102-100B LFPAK Description Version plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 Type number
BUK7Y102-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 7 April 2010
2 of 14
NXP Semiconductors
BUK7Y102-100B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 4 Tmb = 100 °C; VGS = 10 V; see Figure 1 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C ID = 15 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped see Figure 3
[1][2][3]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -20 -55 -55 Typ Max 100 100 20 15 10.6 60 60 175 175 15 60 35 Unit V V V A A A W °C °C A A mJ
Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 4 Tmb = 25 °C; see Figure 2
Source-drain diode
Avalanche ruggedness
EDS(AL)R
-
-
-
J
[1] [2] [3]
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by an average junction temperature of 170 °C. Refer to application note AN10273 for further information.
BUK7Y102-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 7 April 2010
3 of 14
NXP Semiconductors
BUK7Y102-100B
N-channel TrenchMOS standard level FET
20 ID (A) 15
003aac523
120 Pder (%) 80
03na19
10
40
5
0 0 50 100 150 Tmb (°C) 200
0
0
50
100
150
Tmb (°C)
200
Fig 1.
Continuous drain current as a function of mounting base temperature
102 IAL (A) 10
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
003aac502
(1)
1
(2)
10-1
(3)
10-2 10-3
10-2
10-1
1
tAL (ms)
10
Fig 3.
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK7Y102-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 7 April 2010
4 of 14
NXP Semiconductors
BUK7Y102-100B
N-channel TrenchMOS standard level FET
102 Limit RDSon = VDS / ID ID (A) 10μ s 10 100μ s
003aac623
DC 1 1ms 10ms 100ms 10-1 1 10
102
VDS (V)
103
Fig 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions see Figure 5 Min Typ Max 2.53 Unit K/W
10 Zth (j-mb) (K/W) δ = 0.5 1 0.2 0.1
003aac483
10-1
0.05 0.02 single shot
P
δ=
tp T
tp T
t
10-2 10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 5.
Transient thermal impedance from junction to mounting base as.