ME20N03

ME20N03 N-Channel Enhancement MOSFET GENERAL DESCRIPTION The ME20N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON) ≦15mΩ@VGS=10V ● RDS(ON) ≦20mΩ @VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Desktop Computer ● Video Graphic Accelerate Card ● Battery Powered System ● DC/DC Converter PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Thermal Resistance-Junction to Ambient(Note 2) Thermal Resistance-Junction to Case TC=25℃ TC=70℃ TC=25℃ TC=100℃ Symbol VDSS VGSS ID IDM PD TJ RθJA RθJC Limit 30 ±20 39 25 100 37 24 -55 to 150 T≦10 sec Steady State 3.3 15 45 (Note 1) Unit V V A A W ℃ ℃/W ℃/W Note 1: Bonding wire current limit Note 2: The device mounted on 1in FR4 board with 2 oz copper 2 Sep,2008-Ver2.0 01 ...