N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP85T03GS/P-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fas...
Description
AP85T03GS/P-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 6mΩ 75A
Description
The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85T03GP) is available for low-profile applications. G D S
TO-263(S)
G D
TO-220(P)
S Units V V A A A W W/ ℃ ℃ ℃
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 30 +20 75 55 350 107 0.7 -55 to 175 -55 to 175
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 1.4 40 62
Units ℃/W ℃/W ℃/W 1 201104256
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
AP85T03GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
∆BVDSS/∆Tj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
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