DP AK
BUK9217-75B
N-channel TrenchMOS logic level FET
Rev. 02 — 3 February 2011 Product data sheet
1. Product profile
...
DP AK
BUK9217-75B
N-channel TrenchMOS logic level FET
Rev. 02 — 3 February 2011 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 185 °C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 185 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Min Typ Max Unit 75 64 167 V A W mΩ mΩ
total power dissipation Tmb = 25 °C; see Figure 2 drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 10; see Figure 11 ID = 64 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped VGS = 5 V; ID = 25 A; VDS = 60 V; Tj = 25 °C; see Figure 12
Static characteristics 13.4 15 14.4 17
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy gate-drain charge 147 mJ
Dynamic characteristics QGD 14 nC
NXP Semiconductors
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