Document
D2 PA K
BUK7623-75A
N-channel TrenchMOS standard level FET
Rev. 2 — 2 February 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive and general purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 75 53 138 V A W
Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 Avalanche ruggedness EDS(AL)S non-repetitive ID = 49 A; Vsup ≤ 75 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped 120 mJ 49 mΩ
-
17
23
mΩ
NXP Semiconductors
BUK7623-75A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
2 1 3 mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT404 (D2PAK)
3. Ordering information
Table 3. Ordering information Package Name BUK7623-75A D2PAK Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) Version SOT404 Type number
BUK7623-75A
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 2 February 2011
2 of 13
NXP Semiconductors
BUK7623-75A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Tmb = 100 °C; VGS = 10 V; see Figure 1 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 49 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 2 Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -20 -55 -55 Max 75 75 20 53 37 213 138 175 175 53 213 120 Unit V V V A A A W °C °C A A mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source.