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BUK7623-75A Dataheets PDF



Part Number BUK7623-75A
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS standard level FET
Datasheet BUK7623-75A DatasheetBUK7623-75A Datasheet (PDF)

D2 PA K BUK7623-75A N-channel TrenchMOS standard level FET Rev. 2 — 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance „ Suit.

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D2 PA K BUK7623-75A N-channel TrenchMOS standard level FET Rev. 2 — 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance „ Suitable for standard level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V, 24 V and 42 V loads „ Automotive and general purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 75 53 138 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 Avalanche ruggedness EDS(AL)S non-repetitive ID = 49 A; Vsup ≤ 75 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped 120 mJ 49 mΩ - 17 23 mΩ NXP Semiconductors BUK7623-75A N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain 2 1 3 mb D Simplified outline Graphic symbol G mbb076 S SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Package Name BUK7623-75A D2PAK Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) Version SOT404 Type number BUK7623-75A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 2 February 2011 2 of 13 NXP Semiconductors BUK7623-75A N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Tmb = 100 °C; VGS = 10 V; see Figure 1 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 49 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 2 Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -20 -55 -55 Max 75 75 20 53 37 213 138 175 175 53 213 120 Unit V V V A A A W °C °C A A mJ In accordance with the Absolute Maximum Rating System (IEC 60134). Source.


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