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BUK6610-75C Dataheets PDF



Part Number BUK6610-75C
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS FET
Datasheet BUK6610-75C DatasheetBUK6610-75C Datasheet (PDF)

BUK6610-75C N-channel TrenchMOS FET Rev. 02 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive so.

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BUK6610-75C N-channel TrenchMOS FET Rev. 02 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V Automotive systems „ Electric and electro-hydraulic power steering „ EngineMotors, lamps and solenoid control management „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 Min Typ 8.6 Max Unit 75 78 158 10 V A W mΩ Static characteristics NXP Semiconductors BUK6610-75C N-channel TrenchMOS FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 121 mJ Table 1. Symbol EDS(AL)S Avalanche ruggedness non-repetitive ID = 78 A; Vsup ≤ 75 V; drain-source avalanche RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped energy gate-drain charge ID = 25 A; VDS = 60 V; VGS = 10 V; see Figure 13; see Figure 14 Dynamic characteristics QGD 30 nC 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain 2 1 3 mb D Simplified outline Graphic symbol G mbb076 S SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Package Name BUK6610-75C D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number BUK6610-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 14 October 2010 2 of 15 NXP Semiconductors BUK6610-75C N-channel TrenchMOS FET 4. Limiting values Table 4. Symbol VDS VGS ID IDM Ptot Tstg Tj IS ISM EDS(AL)S EDS(AL)R Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C ID = 78 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped [4][5][6] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj ≥ 25 °C; Tj ≤ 175 °C DC Pulsed Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 Tmb = 25 °C; see Figure 2 [3] [1] [2] Min -16 -20 -55 -55 - Max 75 16 20 78 55 311 158 175 175 78 311 121 - Unit V V V A A A W °C °C A A mJ J Source-drain diode Avalanche ruggedness [1] [2] [3] [4] [5] [6] -16V accumulated duration not to exceed 168 hrs. Accumulated pulse duration not to exceed 5mins. Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by an average junction temperature of 170 °C. Refer to application note AN10273 for further information. BUK6610-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 14 October 2010 3 of 15 NXP Semiconductors BUK6610-75C N-channel TrenchMOS FET 100 ID (A) 80 003aae406 120 Pder (%) 80 03aa16 60 40 40 20 0 0 50 100 150 200 Tmb (°C) 0 0 50 100 150 Tmb (°C) 200 Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aae408 103 ID (A) 102 Limit RDSon = VDS / ID tp =10 μ s 100 μ s 10 DC 1 1 ms 10 ms 100 ms 10-1 1 10 102 V DS (V) 103 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK6610-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 14 October 2010 4 of 15 NXP Semiconductors BUK6610-75C N-channel TrenchMOS FET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions see Figure 4 Min Typ Max 0.95 Unit K/W 1 Zth (K/W) δ = 0.5 0.2 003aae407 10-1 0.1 0.05 0.02 tp T 10-2 single shot P δ= tp T t 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s ) 1 Fig 4. Transient thermal impedance from junction.


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