STM4460

STM4460 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 7A R DS(ON) (m Ω) Max 32 @ VGS=10V 45 @ VGS=4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a TA=25°C TA=70°C d Limit 40 ±20 7 5.6 28 9 Units V V A A A mJ W W °C -Pulsed Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C 2.5 1.6 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. Jun,18,2008 1 www.samhop.com.tw STM4460 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance VGS= ±20V , VDS=0V 1 ±100 uA nA VDS=VGS , ID=250uA VGS=10V , ID=7A VGS=4.5V , ID=6A VDS=10V , ID=7A 1 1.9 26 33 16 3 32 45 V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC DY...