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STM4433A Dataheets PDF



Part Number STM4433A
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet STM4433A DatasheetSTM4433A Datasheet (PDF)

S T M4433A S amHop Microelectronics C orp. J an.25 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) Max 5 ID -6A R DS (ON) S uper high dense cell design for low R DS (ON ). 35 @ V G S = -10V 55 @ V G S = -4.5V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain.

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S T M4433A S amHop Microelectronics C orp. J an.25 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) Max 5 ID -6A R DS (ON) S uper high dense cell design for low R DS (ON ). 35 @ V G S = -10V 55 @ V G S = -4.5V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -30 20 -6 -30 -1.7 2.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 50 C /W 1 S T M4433A E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-5.8A V GS = -4.5V, ID = -2.0A V DS = -5V, V GS = -10V V DS = -15V, ID = - 5.8A Min Typ C Max Unit -30 -1 100 -1 -1.9 21 40 -20 8.5 920 270 170 -3.0 V uA nA V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 35 m-ohm 55 m-ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =-15V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd 2 V D = -15V, ID = -1A, V GE N = - 10V, R GE N = 6 -ohm V DS =-15V, ID=-5.8A,V GS =-10V V DS =-15V, ID=-5.8A,V GS =-4.5V V DS =-15V, ID = -5.8A, V GS =-10V 8.6 35.3 36.9 36.3 17.5 9.4 2.9 4.8 ns ns ns ns nC nC nC nC S T M4433A E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition V GS = 0V, Is =-1.7A Min Typ C Max Unit -0.77 -1.2 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%. c.Guaranteed by design, not subject to production testing. 20 -V G S =4.5V -V G S =10V -V G S =4V -V G S =3.5V 25 -I D , Drain C urrent (A) -I D , Drain C urrent (A) 16 20 12 -V G S =3V 15 125 C 10 25 C 5 0 -55 C 0 0.8 1.6 2.4 3.2 4.0 4.8 8 4 -V G S =2V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 1500 1.8 F igure 2. Trans fer C haracteris tics R DS (ON) , On-R es is tance (Normalized) 1250 1.6 1.4 1.2 1.0 0.8 0.6 -55 V G S =-10V I D =-5.8A C , C apacitance (pF ) 1000 750 500 250 C rs s 0 0 5 10 15 20 C os s C is s 25 30 -25 0 25 50 75 100 125 -V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S T M4433A 1.2 1.1 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =-250uA B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.3 I D =-250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 15 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 V G S =0V gF S , T rans conductance (S ) -Is , S ource-drain current (A) 20 12 9 6 3 V DS =-15V 0 0 5 10 15 10.0 1.0 0.4 0.6 0.7 0.9 1.1 1.3 -I DS , Drain-S ource C urrent (A) -V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent -V G S , G ate to S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 -I D , Drain C urrent (A) 10 8 6 4 2 0 0 3 6 9 12 15 18 21 24 Qg, T otal G ate C harge (nC ) V DS =-15V I D =-5.8A 10 R (O DS N) L im it 10 10 1s ms 0m s 1 DC 0.1 0.03 V G S =-10V S ingle P ulse T A =25 C 0.1 1 10 30 50 -V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge 4 F igure 10. Maximum S afe O perating Area S T M4433A -V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 5 10% S V IN 50% 10% 50% INVE R TE D P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R t.


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