Document
S T M4433A
S amHop Microelectronics C orp. J an.25 2005
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
-30V
F E AT UR E S
( m W ) Max
5
ID
-6A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
35 @ V G S = -10V 55 @ V G S = -4.5V
R ugged and reliable. S urface Mount P ackage.
D
8
D
7
D
6
D
5
S O-8 1
1 2 3 4
S
S
S
G
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -30 20 -6 -30 -1.7 2.5 -55 to 150 Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA 50 C /W
1
S T M4433A
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS
c
Condition
V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-5.8A V GS = -4.5V, ID = -2.0A V DS = -5V, V GS = -10V V DS = -15V, ID = - 5.8A
Min Typ C Max Unit
-30 -1 100 -1 -1.9 21 40 -20 8.5 920 270 170 -3.0 V uA nA V
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 35 m-ohm 55 m-ohm A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =-15V, V GS = 0V f =1.0MH Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Q gs Q gd
2
V D = -15V, ID = -1A, V GE N = - 10V, R GE N = 6 -ohm V DS =-15V, ID=-5.8A,V GS =-10V V DS =-15V, ID=-5.8A,V GS =-4.5V V DS =-15V, ID = -5.8A, V GS =-10V
8.6 35.3 36.9 36.3 17.5 9.4 2.9 4.8
ns ns ns ns nC nC nC nC
S T M4433A
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
V GS = 0V, Is =-1.7A
Min Typ C Max Unit
-0.77 -1.2 V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%. c.Guaranteed by design, not subject to production testing.
20
-V G S =4.5V -V G S =10V -V G S =4V -V G S =3.5V
25
-I D , Drain C urrent (A)
-I D , Drain C urrent (A)
16
20
12
-V G S =3V
15 125 C 10 25 C 5 0 -55 C 0 0.8 1.6 2.4 3.2 4.0 4.8
8 4
-V G S =2V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
-V DS , Drain-to-S ource Voltage (V )
-V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
1500 1.8
F igure 2. Trans fer C haracteris tics
R DS (ON) , On-R es is tance (Normalized)
1250
1.6 1.4 1.2 1.0 0.8 0.6 -55
V G S =-10V I D =-5.8A
C , C apacitance (pF )
1000 750 500 250 C rs s 0 0 5 10 15 20 C os s
C is s
25
30
-25
0
25
50
75
100
125
-V DS , Drain-to S ource Voltage (V )
T j, J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with Temperature
3
S T M4433A
1.2 1.1 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =-250uA
B V DS S , Normalized Drain-S ource B reakdown V oltage
V th, Normalized G ate-S ource T hres hold V oltage
1.3
1.3 I D =-250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150
5
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
15
F igure 6. B reakdown V oltage V ariation with T emperature
20.0 V G S =0V
gF S , T rans conductance (S )
-Is , S ource-drain current (A)
20
12 9 6 3 V DS =-15V 0 0 5 10 15
10.0
1.0 0.4 0.6 0.7 0.9 1.1 1.3
-I DS , Drain-S ource C urrent (A)
-V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation with Drain C urrent
-V G S , G ate to S ource V oltage (V )
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
50
-I D , Drain C urrent (A)
10 8 6 4 2 0 0 3 6 9 12 15 18 21 24
Qg, T otal G ate C harge (nC )
V DS =-15V I D =-5.8A
10
R
(O DS
N)
L im
it
10
10
1s
ms
0m
s
1
DC
0.1 0.03
V G S =-10V S ingle P ulse T A =25 C 0.1 1 10 30 50
-V DS , Drain-S ource V oltage (V )
F igure 9. G ate C harge 4
F igure 10. Maximum S afe O perating Area
S T M4433A
-V DD ton V IN D VG S R GE N G
90%
toff tr
90%
RL V OUT
td(on) V OUT
td(off)
90% 10%
tf
5
10%
S
V IN
50% 10%
50%
INVE R TE D P ULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
2
r(t),Normalized E ffective T ransient T hermal Impedance
1 Duty C ycle=0.5
0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10
-4
P DM t1 1. 2. 3. 4. 10
-2
t2
R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R t.