2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor
March 2008
2SC3503/KSC3503 NPN Epitaxial Silicon Transistor
Applica...
2SC3503/KSC3503 —
NPN Epitaxial Silicon
Transistor
March 2008
2SC3503/KSC3503
NPN Epitaxial Silicon
Transistor
Applications
Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier
Features
High Voltage : VCEO= 300V Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V Excellent Gain Linearity for low THD High Frequency: 150MHz Full thermal and electrical Spice models are available Complement to 2SA1381/KSA1381.
1
TO-126 2.Collector 3.Base
1. Emitter
Absolute Maximum Ratings*
Symbol
BVCBO BVCEO BVEBO IC ICP PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse)
Ta = 25°C unless otherwise noted
Parameter
Ratings
300 300 5 100 200 7 1.2 - 55 ~ +150
Units
V V V mA mA W W °C
Total Device Dissipation, TC=25°C TC=125°C Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Symbol
RθJC
* Device mounted on minimum pad size
Ta=25°C unless otherwise noted
Parameter
Thermal Resistance, Junction to Case
Max.
17.8
Units
°C/W
hFE Classification
Classification
hFE C 40 ~ 80 D 60 ~ 120 E 100 ~ 200 F 160 ~ 320
© 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev. A1 1
www.fairchildsemi.com
2SC3503/KSC3503 —
NPN Epitaxial Silicon
Transistor
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
BVCBO BVCE...