BUK9575-55A

TO -22 0A B BUK9575-55A N-channel TrenchMOS logic level FET Rev. 2 — 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance „ Suitable for logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V loads „ Automotive and general purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 55 20 62 V A W NXP Semiconductors BUK9575-55A N-channel TrenchMOS logic level FET Quick reference data …continued Parameter drain-source on-state resistance Conditions VGS = 4.5 V; ID = 10 A; Tj = 25 °C VGS = 10 V; ID = 10 A; Tj = 25 °C VGS = 5 V; ID = 10 A; Tj = 25 °C; see Figure 12; see Figure 13 Min Typ 58 64 Max Unit 81 68 75 mΩ mΩ mΩ Table 1. Symbol RDSon Static characteristics Avalanche ruggedness EDS(AL)S non-repetitive ID = 12 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 5 V; avala...