TO -22 0A B
BUK9511-55A
N-channel TrenchMOS logic level FET
Rev. 2 — 7 February 2011 Product data sheet
1. Product pro...
TO -22 0A B
BUK9511-55A
N-channel TrenchMOS logic level FET
Rev. 2 — 7 February 2011 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 55 75 166 V A W
NXP Semiconductors
BUK9511-55A
N-channel TrenchMOS logic level FET
Quick reference data …continued Parameter drain-source on-state resistance Conditions VGS = 4.5 V; ID = 25 A; Tj = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 Min Typ 8 9 Max Unit 12 10 11 mΩ mΩ mΩ
Table 1. Symbol RDSon
Static characteristics
Avalanche ruggedness EDS(AL)S non-repetitive ID = 75 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 5 V; avalan...