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BC813C

Part Number	BC813C
Manufacturer	Fairchild Semiconductor
Description	PNP Epitaxial Silicon Transistor
Published	Aug 20, 2014
Detailed Description	BC318C — PNP Epitaxial Silicon Transistor September 2007 BC318C PNP Epitaxial Silicon Transistor • This device is desi...
Datasheet	BC813C PDF File

Overview

BC318C — PNP Epitaxial Silicon Transistor September 2007 BC318C PNP Epitaxial Silicon Transistor • This device is designed for general purpose amplifier application at collector currents to 800mA.
• Sourced from process 38.
1 TO-92 1.
Emitter 2.
Base 3.
Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Operating and Storage Junction Temperature Range Parameter Value 30 20 5 100 -55 ~ 150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings ar...

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