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MIG150Q6CMB1X Dataheets PDF



Part Number MIG150Q6CMB1X
Manufacturers Toshiba
Logo Toshiba
Description Silicon N Channel IGBT
Datasheet MIG150Q6CMB1X DatasheetMIG150Q6CMB1X Datasheet (PDF)

MIG150Q6CMB1X TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG150Q6CMB1X (1200V/150A 6in1) High Power Switching Applications Motor Control Applications · · · · · · Integrates inverter power circuits and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. The electrodes are isolated from the case. Low thermal resistance VCE (sat) = 2.4 V (typ.) UL recognized: File No.E87989 We.

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MIG150Q6CMB1X TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG150Q6CMB1X (1200V/150A 6in1) High Power Switching Applications Motor Control Applications · · · · · · Integrates inverter power circuits and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. The electrodes are isolated from the case. Low thermal resistance VCE (sat) = 2.4 V (typ.) UL recognized: File No.E87989 Weight: 385 g (typ.) Equivalent Circuit 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT W 1. 8. 15. VD (U) GND (V) Open 2. 9. 16. FO (U) VD (W) Open V 3. 10. 17. IN (U) FO (W) IN (X) 4. 11. 18. U GND (U) IN (W) IN (Y) 5. 12. 19. VD (V) GND (W) IN (Z) 6. 13. 20. FO (V) VD (L) N 7. 14. IN (V) FO (L) P GND (L) 1 2001-11-13 MIG150Q6CMB1X Package Dimensions: TOSHIBA 2-123A1A Unit: mm 1. 8. 15. VD (U) GND (V) Open 2. 9. 16. FO (U) VD (W) Open 3. 10. 17. IN (U) FO (W) IN (X) 4. 11. 18. GND (U) IN (W) IN (Y) 5. 12. 19. VD (V) GND (W) IN (Z) 6. 13. 20. FO (V) VD (L) GND (L) 7. 14. IN (V) FO (L) 2 2001-11-13 MIG150Q6CMB1X Signal Terminal Layout Unit: mm 1. 8. 15. VD (U) GND (V) Open 2. 9. 16. FO (U) VD (W) Open 3. 10. 17. IN (U) FO (W) IN (X) 4. 11. 18. GND (U) IN (W) IN (Y) 5. 12. 19. VD (V) GND (W) IN (Z) 6. 13. 20. FO (V) VD (L) GND (L) 7. 14. IN (V) FO (L) 3 2001-11-13 MIG150Q6CMB1X Maximum Ratings (Tj = 25°C) Stage Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Control supply voltage Input voltage Control Fault output voltage Fault output current Operating temperature Storage temperature range Module Isolation voltage Screw torque AC 1 min M5 FO-GND terminal FO sink current Tc = 25°C, DC Tc = 25°C, DC Tc = 25°C ¾ VD-GND terminal IN-GND terminal Characteristics Condition P-N power terminal ¾ Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO Rating 900 1200 150 150 1400 150 20 20 20 14 -20~+100 -40~+125 2500 3 Unit V V A A W °C V V V mA °C °C V N・m ¾ ¾ Tc Tstg VISO ¾ Electrical Characteristics 1. Inverter stage Characteristics Collector cut-off current Symbol ICEX Test Condition VCE = 1200 V VD = 15 V IC = 150 A VIN = 15 V ® 0 V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min ¾ ¾ ¾ ¾ ¾ ¾ VCC = 600 V, IC = 150 A VD = 15 V, VIN = 15 V « 0 V Tj = 25°C, Inductive load (Note 1) ¾ ¾ ¾ ¾ Typ. ¾ ¾ 2.4 2.8 2.4 2.0 0.6 0.3 1.0 0.3 Max 1 10 2.8 ¾ 2.8 3.0 ¾ ¾ 2.0 ¾ ms V V Unit mA Collector-emitter saturation voltage Forward voltage VCE (sat) VF ton tc (on) IF = 150 A, Tj = 25°C Switching time trr toff tc (off) Note 1: Switching time test circuit & timing chart 4 2001-11-13 MIG150Q6CMB1X 2. Control stage (Tj = 25°C) Characteristics Control circuit current Input on signal voltage Input off signal voltage Protection Fault output current Normal Overcurrent protection trip Inverter level Short-circuit protection trip level Overcurrent cut-off time Overtemperature protection Control supply under voltage protection Fault output pulse width Trip level Reset level Trip level Reset level Inverter High side Low side Symbol ID (H) ID (L) VIN (on) VIN (off) IFO (on) IFO (off) OC SC toff (OC) OT Case temperature OTr UV UVr tFO VD = 15 V ¾ VD = 15 V Test Condition Min ¾ ¾ 1.4 2.2 ¾ ¾ 240 240 ¾ 110 ¾ 11.0 12.0 1 Typ. 13 39 1.6 2.5 10 ¾ ¾ ¾ 5 118 98 12.0 12.5 2 Max 17 51 1.8 V 2.8 12 mA 0.1 ¾ ¾ ¾ 125 ¾ 12.5 V 13.0 3 ms °C A A ms Unit mA VD = 15 V VD = 15 V VD = 15 V, Tj < = 125°C VD = 15 V, Tj < = 125°C VD = 15 V 3. Thermal resistance (Tc = 25°C) Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) IGBT FRD Compound is applied Test Condition Min ¾ ¾ ¾ Typ. ¾ ¾ 0.013 Max 0.089 0.19 ¾ °C/W Unit °C/W 5 2001-11-13 MIG150Q6CMB1X Switching Time Test Circuit Intelligent power module TLP559 VD 0.1 mF 15 kW OUT IN 15 V 47 mF GND VS P GND U (V, W) VCC VD IF = 16 mA PG 15 V 47 mF GND 0.1 mF 15 kW OUT IN VS N GND Timing Chart Input pulse 15 V VIN Waveform 0 2.5 V 1.6 V 90% Irr IC Waveform Irr 90% trr 20% Irr VCE Waveform 10% toff 10% tc (off) 10% ton 10% tc (on) 6 2001-11-13 MIG150Q6CMB1X 4. Recommended conditions for application Characteristics Supply voltage Control supply voltage Carrier frequency Dead time Symbol VCC VD fc tdead Test Condition P-N power terminal VD-GND signal terminal PWM control Switching time test circuit (Note 2) Min ¾ 13.5 ¾ 5 Typ. 600 15 ¾ ¾ Max 800 16.5 20 ¾ Unit V V kHz ms Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead .


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