BUK9616-55A

Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9516-55A BUK9616-55A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX. 55 66 138 175 16 15 UNIT V A W ˚C mΩ mΩ PINNING TO220AB & SOT404 PIN 1 2 3 DESCRIPTION gate drain 2 mb tab PIN CONFIGURATION SYMBOL d g 3 SOT404 BUK9616-55A source 1 tab/mb drain 1 2 3 TO220AB BUK9516-55A s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ±VGSM ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Non-repetitive gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ tp≤50µS Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 55 55 10 15 66 46 263 138 175 UNIT V V V V A A A W ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient(TO2...