BUK7610-55AL

BUK7610-55AL N-channel TrenchMOS standard level FET Rev. 02 — 9 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features „ 175 °C rated „ Stable operation in linear mode „ Q101 compliant „ TrenchMOS technology 1.3 Applications „ 12 V and 24 V loads „ DC linear motor control „ Automotive systems „ Repetitive clamped inductive switching 1.4 Quick reference data Table 1. Symbol ID Ptot EDS(AL)S Quick reference Parameter drain current total power dissipation non-repetitive drain-source avalanche energy Conditions VGS = 10 V; Tmb = 25 °C; see Figure 4 and 1 Tmb = 25 °C; see Figure 2 ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped inductive load VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13 [1] Min - Typ - Max 75 300 1.1 Unit A W J Avalanche ruggedness Static characteristics RDSon drain-source on-state resistance 8.5 10 mΩ [1] Continuous current is limited by package. NXP Semiconductors BUK7610-55AL N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning Symbol G D S D Description gate drain source mounting base; connected to drain 1 G mbb076 Simplified outlin...