BUK7606-55B

BUK7606-55B N-channel TrenchMOS standard level FET Rev. 02 — 21 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant  Suitable for standard level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V and 24 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids NXP Semiconductors BUK7606-55B N-channel TrenchMOS standard level FET 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 55 75 254 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 5.1 6 mΩ Avalanche ruggedness EDS(AL)S non-repetitive ID = 75 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge VGS = 10 V; ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure 13 680 mJ Dynamic characteristics QGD 19...