Dual N-Channel MOSFET
LF
BUK9K35-60E
23 April 2013
PA K
56D
Dual N-channel TrenchMOS logic level FET
Product data sheet
1. General descr...
Description
LF
BUK9K35-60E
23 April 2013
PA K
56D
Dual N-channel TrenchMOS logic level FET
Product data sheet
1. General description
Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) > 0.5 V @ 175 °C
3. Applications
12 V Automotive systems Motors, lamps and solenoid control Start-stop micro-hybrid applications Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 12 Min Typ Max 60 22 38 Unit V A W
Static characteristics FET1 and FET2 drain-source on-state resistance gate-drain charge 30.5 35 mΩ
Dynamic characteristics FET1 and FET2 QGD ID = 5 A; VDS = 48 V; VGS = 10 V; Tj = 25 °C; Fig. 14; Fig. 15 3 nC
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NXP Semiconductors
BUK9K35-60E
Dual N-channel TrenchMOS logic level FET
5. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S1 G1 S2 G2 D2 D2 D1 D1 source1...
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