DatasheetsPDF.com

BUK7K17-60E Dataheets PDF



Part Number BUK7K17-60E
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description Dual N-Channel MOSFET
Datasheet BUK7K17-60E DatasheetBUK7K17-60E Datasheet (PDF)

LF BUK7K17-60E 10 December 2013 PA K 56D Dual N-channel 60 V, 14 mΩ standard level MOSFET Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • • Dual MOSFET Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments du.

  BUK7K17-60E   BUK7K17-60E


Document
LF BUK7K17-60E 10 December 2013 PA K 56D Dual N-channel 60 V, 14 mΩ standard level MOSFET Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • • Dual MOSFET Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) of greater than 1 V at 175 °C 3. Applications • • • • 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 11 ID = 10 A; VDS = 48 V; VGS = 20 V; Tj = 25 °C; Fig. 13; Fig. 14 [1] Continuous current is limited by package [1] Min - Typ - Max 60 30 53 Unit V A W Static characteristics FET1 and FET2 drain-source on-state resistance 11.3 14 mΩ Dynamic characteristics FET1 and FET2 QGD gate-drain charge 8.1 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK7K17-60E Dual N-channel 60 V, 14 mΩ standard level MOSFET 5. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S1 G1 S2 G2 D2 D2 D1 D1 source1 gate1 source2 gate2 drain2 drain2 drain1 drain1 1 2 3 4 S1 G1 S2 G2 mbk725 Simplified outline 8 7 6 5 Graphic symbol D1 D1 D2 D2 LFPAK56D (SOT1205) 6. Ordering information Table 3. Ordering information Package Name BUK7K17-60E LFPAK56D Description Plastic single ended surface mounted package (LFPAK56D); 8 leads Version SOT1205 Type number 7. Marking Table 4. Marking codes Marking code 71760E Type number BUK7K17-60E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj ≤ 175 °C; DC VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 100 °C; VGS = 10 V; Fig. 1 IDM Ptot BUK7K17-60E Min -20 [1] Max 60 60 20 30 29 164 53 Unit V V V A A A W 2 / 13 - peak drain current total power dissipation Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Tmb = 25 °C; Fig. 2 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 10 December 2013 NXP Semiconductors BUK7K17-60E Dual N-channel 60 V, 14 mΩ standard level MOSFET Symbol Tstg Tj IS ISM EDS(AL)S Parameter storage temperature junction temperature Conditions Min -55 -55 Max 175 175 Unit °C °C Source-drain diode FET1 and FET2 source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 30 A; Vsup ≤ 60 V; VGS = 10 V; Tj(init) = 25 °C; Fig. 3 [1] - 30 164 A A Avalanche Ruggedness FET1 and FET2 non-repetitive drain-source avalanche energy [1] [2] [3] 50 [2][3] - 55 mJ Continuous current is limited by package Refer to application note AN10273 for further information Single-pulse avalanche rating limited by maximum junction temperature of 175 °C 003aal069 ID (A) 120 Pder (%) 80 03aa16 40 30 (1) 20 40 10 0 0 30 60 90 120 150 Tj (°C) 180 0 0 50 100 150 Tmb (°C) 200 (1) Capped at 30A due to package Fig. 1. Continuous drain current as a function of mounting base temperature Fig. 2. Normalized total power dissipation as a function of mounting base temperature BUK7K17-60E All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 10 December 2013 3 / 13 NXP Semiconductors BUK7K17-60E Dual N-channel 60 V, 14 mΩ standard level MOSFET IAL (A) 102 003aal070 (1) 10 (2) 1 (3) 10-1 10-3 10-2 10-1 1 tAL (ms) 10 Fig. 3. Avalanche rating; avalanche current as a function of avalanche time ID (A) 103 003aal071 Limit RDSon = VDS / ID 102 tp = 10 us 100 us 10 1 DC 1 ms 10 ms 100 ms 102 10-1 10-1 1 10 VDS (V) Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions Fig. 5 Min Typ Max 2.84 Unit K/W Rth(j-a) Minimum footprint; mounted on a printed circuit board - 95 - K/W BUK7K17-60E All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 10 December 2013 4 / 13 NXP Semiconductors BUK7K17-60E Dual N-channel 60 V, 14 mΩ standard level MOSFET 10 Zth(j-mb) (K/W) 003aal0.


BUK9K17-60E BUK7K17-60E BUK9K35-60E


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)