Document
LF
BUK7K17-60E
10 December 2013
PA K
56D
Dual N-channel 60 V, 14 mΩ standard level MOSFET
Product data sheet
1. General description
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
• • • • •
Dual MOSFET Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) of greater than 1 V at 175 °C
3. Applications
• • • •
12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 11 ID = 10 A; VDS = 48 V; VGS = 20 V; Tj = 25 °C; Fig. 13; Fig. 14
[1] Continuous current is limited by package [1]
Min -
Typ -
Max 60 30 53
Unit V A W
Static characteristics FET1 and FET2 drain-source on-state resistance 11.3 14 mΩ
Dynamic characteristics FET1 and FET2 QGD gate-drain charge 8.1 nC
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NXP Semiconductors
BUK7K17-60E
Dual N-channel 60 V, 14 mΩ standard level MOSFET
5. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S1 G1 S2 G2 D2 D2 D1 D1 source1 gate1 source2 gate2 drain2 drain2 drain1 drain1
1 2 3 4
S1 G1 S2 G2
mbk725
Simplified outline
8 7 6 5
Graphic symbol
D1 D1 D2 D2
LFPAK56D (SOT1205)
6. Ordering information
Table 3. Ordering information Package Name BUK7K17-60E LFPAK56D Description Plastic single ended surface mounted package (LFPAK56D); 8 leads Version SOT1205 Type number
7. Marking
Table 4. Marking codes Marking code 71760E Type number BUK7K17-60E
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj ≤ 175 °C; DC VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 100 °C; VGS = 10 V; Fig. 1 IDM Ptot
BUK7K17-60E
Min -20
[1]
Max 60 60 20 30 29 164 53
Unit V V V A A A W
2 / 13
-
peak drain current total power dissipation
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Tmb = 25 °C; Fig. 2
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
10 December 2013
NXP Semiconductors
BUK7K17-60E
Dual N-channel 60 V, 14 mΩ standard level MOSFET
Symbol Tstg Tj IS ISM EDS(AL)S
Parameter storage temperature junction temperature
Conditions
Min -55 -55
Max 175 175
Unit °C °C
Source-drain diode FET1 and FET2 source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 30 A; Vsup ≤ 60 V; VGS = 10 V; Tj(init) = 25 °C; Fig. 3
[1]
-
30 164
A A
Avalanche Ruggedness FET1 and FET2 non-repetitive drain-source avalanche energy
[1] [2] [3]
50
[2][3]
-
55
mJ
Continuous current is limited by package Refer to application note AN10273 for further information Single-pulse avalanche rating limited by maximum junction temperature of 175 °C
003aal069
ID (A)
120 Pder (%) 80
03aa16
40
30
(1)
20
40
10
0
0
30
60
90
120
150 Tj (°C)
180
0
0
50
100
150
Tmb (°C)
200
(1) Capped at 30A due to package Fig. 1. Continuous drain current as a function of mounting base temperature
Fig. 2.
Normalized total power dissipation as a function of mounting base temperature
BUK7K17-60E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
10 December 2013
3 / 13
NXP Semiconductors
BUK7K17-60E
Dual N-channel 60 V, 14 mΩ standard level MOSFET
IAL (A)
102
003aal070
(1)
10
(2)
1
(3)
10-1 10-3
10-2
10-1
1 tAL (ms)
10
Fig. 3.
Avalanche rating; avalanche current as a function of avalanche time
ID (A)
103
003aal071
Limit RDSon = VDS / ID 102 tp = 10 us 100 us 10
1
DC
1 ms 10 ms 100 ms 102
10-1 10-1
1
10
VDS (V)
Fig. 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions Fig. 5 Min Typ Max 2.84 Unit K/W
Rth(j-a)
Minimum footprint; mounted on a printed circuit board
-
95
-
K/W
BUK7K17-60E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
10 December 2013
4 / 13
NXP Semiconductors
BUK7K17-60E
Dual N-channel 60 V, 14 mΩ standard level MOSFET
10 Zth(j-mb) (K/W)
003aal0.