N-Channel MOSFET
D2
PA K
PSMN2R8-80BS
N-channel 80 V, 3 mΩ standard level FET in D2PAK
Rev. 2 — 29 February 2012 Product data sheet
1....
Description
D2
PA K
PSMN2R8-80BS
N-channel 80 V, 3 mΩ standard level FET in D2PAK
Rev. 2 — 29 February 2012 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters Load switch Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge non-repetitive drain-source avalanche energy VGS = 10 V; ID = 75 A; VDS = 40 V; see Figure 14; see Figure 15 27 139 676 nC nC mJ Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -55 -
Typ 4.21 2.55
Max 80 120 306 175 5 3
Unit V A W °C mΩ mΩ
Static characteristics
Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped
[1]
Continuous current is limited by package.
NXP Semiconductors
PSMN2R8-80BS
N-channel 80 V, 3 mΩ ...
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