RU3582S

RU3582S N-Channel Advanced Power MOSFET MOSFET Features 40V/100A, RDS (ON) =5mΩ (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche tested 175°C Operating Temperature Lead Free,RoHS compliant Pin Description TO-263 Applications Switching Application Systems UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 40 ±20 175 -55 to 175 TC=25°C 100 400 ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS IDP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current(VGS=10V) TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C ② ① A A 100 73 53 PD RθJC ③ 107 W °C/W 1.4 Maximum Power Dissipation Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 576 mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. C– OCT., 2012 www.ruichips.com RU3582S Electrical Characteristics Symbol Parameter (TA=25°C Unless Otherwise Noted) RU3582S Min. Typ. Max. Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) ④ VGS=0V, IDS=250µA VDS= 40V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS= 10V, IDS=40A 40 1 30 2 3 4 ±100 5 6.5 V µA V nA mΩ Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistanc...