PSMN2R0-60ES

I2P AK PSMN2R0-60ES N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK Rev. 02 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for standard level gate drive sources 1.3 Applications „ DC-to-DC converters „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12; see Figure 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 75 A; VDS = 30 V; see Figure 14; see Figure 15 32 137 nC nC [2] Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 1.8 3 Max Unit 60 120 338 175 2.2 3.5 V A W °C mΩ mΩ Static characteristics Avalanche ruggedness EDS(AL)S non-repetitive VGS = 10 V; Tj(init) = 25 °C; drain-source avalanche ID = 120 A; Vsup ≤ 60 V; energy RGS = 50 Ω; Unclamped 913 mJ NXP Semiconductors PSMN2R0-60ES N-channel 60 V 2.2 mΩ standard level MOSFET in I2P...