PMZB790SN

PMZB790SN 14 August 2012 60 V, single N-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Fast switching Trench MOSFET technology Logic-level compatible Ultra thin package profile of 0.37mm height 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 300 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ - Max 60 20 650 Unit V V mA Static characteristics drain-source on-state resistance [1] - 0.79 0.94 Ω Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . 2 Scan or click this QR code to view the latest information for this product NXP Semiconductors PMZB790SN 60 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain Simplified outline 1 3 2 Transparent top view G S 017aaa253 Graphic symbol D DFN1006B-3 (SOT883B) 3. Ordering information Table 3. Ordering information Package Name PMZB790SN DFN1006B-3 Description Leadless ultra small plastic package; 3 solde...