PSMN2R8-40PS

PSMN2R8-40PS 11 February 2013 TO -2 20A B N-channel TO220 40 V 2.8 mΩ standard level MOSFET Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 3. Applications DC-to-DC converters Load switching Motor control Server power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 [1] Min -55 Typ - Max 40 100 211 175 Unit V A W °C Static characteristics drain-source on-state resistance VGS = 10 V; ID = 10 A; Tj = 100 °C; Fig. 12; Fig. 13 VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 20 V; Fig. 14; Fig. 15 17 71 nC nC [2] - 2.3 4.5 2.8 mΩ mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN2R8-40PS N-channel TO220 40 V 2.8 mΩ standard level MOSFET Symbol EDS(AL)S Parameter non-repetitive drainsource avalanche energy [1] [2] Conditions VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 40 V; un...