N-channel 60V 6.0m ohm logic level MOSFET
LF
BUK9Y6R0-60E
8 May 2013
PA K
56
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56
Product data sheet
1. Gene...
Description
LF
BUK9Y6R0-60E
8 May 2013
PA K
56
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
[1]
Min -
Typ -
Max 60 100 195
Unit V A W
Static characteristics drain-source on-state resistance gate-drain charge 4.6 6 mΩ
Dynamic characteristics QGD VGS = 5 V; ID = 25 A; VDS = 48 V; Fig. 13; Fig. 14
[1] Continuous current is limited by package.
-
11.1
-
nC
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NXP Semiconductors
BUK9Y6R0-60E
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56
5. Pinning information
Table 2. Pin 1 2 3 4 mb Pinning information Symbol Descri...
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