BUK7Y12-55B

BUK7Y12-55B N-channel TrenchMOS standard level FET Rev. 03 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Q101 compliant „ Suitable for standard level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V loads „ Advanced braking systems (ABS) „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 55 V 61.8 A 105 W Static characteristics RDSon VGS = 10 V; ID = 20 A; Tj = 25 °C; see Figure 13; see Figure 12 8.2 12 mΩ Avalanche ruggedness EDS(AL)S non-repetitive ID = 61.8 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 20 A; VDS = 44 V; VGS = 10 V; see Figure 14 129 mJ Dynamic characteristics QGD 14.8 nC NXP Semiconductors BUK7Y12-55B N-channel TrenchMOS standard level...