BUK755R2-40B
N-channel TrenchMOS standard level FET
Rev. 02 — 16 January 2009 Product data sheet
1. Product profile
1.1...
BUK755R2-40B
N-channel TrenchMOS standard level FET
Rev. 02 — 16 January 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3; Tmb = 25 °C; see Figure 2 [1] Min Typ Max 40 75 203 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation Symbol Parameter
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 32 V; Tj = 25 °C; see Figure 14 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 16 nC ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped 494 mJ
Static characteristics RDSon drain-source on-state resistance 4.4 5.2 mΩ
[1]
Continuous current is limited by package.
NXP Semiconductors
BUK755R2-40B
N-channel TrenchMOS standard level FET
2. Pinning infor...